| Silicon substrate removal of GaN DHFETs for enhanced (< 1100 V) breakdown voltage P Srivastava, J Das, D Visalli, J Derluyn, M Van Hove, PE Malinowski, ... IEEE Electron Device Letters 31 (8), 851-853, 2010 | 278 | 2010 |
| Origin and control of OFF-state leakage current in GaN-on-Si vertical diodes Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ... IEEE Transactions on Electron Devices 62 (7), 2155-2161, 2015 | 168 | 2015 |
| Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-Buffer Thickness by Local Substrate Removal P Srivastava, J Das, D Visalli, M Van Hove, PE Malinowski, D Marcon, ... IEEE Electron Device Letters 32 (1), 30-32, 2010 | 156 | 2010 |
| AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon (111) substrates with high electron mobility K Cheng, H Liang, M Van Hove, K Geens, B De Jaeger, P Srivastava, ... Applied Physics Express 5 (1), 011002, 2011 | 142 | 2011 |
| A comprehensive reliability investigation of the voltage-, temperature-and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs D Marcon, T Kauerauf, F Medjdoub, J Das, M Van Hove, P Srivastava, ... 2010 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2010 | 108 | 2010 |
| Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal D Visalli, M Van Hove, P Srivastava, J Derluyn, J Das, M Leys, S Degroote, ... Applied Physics Letters 97 (11), 2010 | 80 | 2010 |
| A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si J Das, J Everts, J Van Den Keybus, M Van Hove, D Visalli, P Srivastava, ... IEEE Electron Device Letters 32 (10), 1370-1372, 2011 | 71 | 2011 |
| Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4 J Derluyn, M Van Hove, D Visalli, A Lorenz, D Marcon, P Srivastava, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 54 | 2009 |
| Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs D Visalli, M Van Hove, J Derluyn, P Srivastava, D Marcon, J Das, MR Leys, ... IEEE Transactions on electron devices 57 (12), 3333-3339, 2010 | 38 | 2010 |
| Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance P Srivastava, H Oprins, M Van Hove, J Das, PE Malinowski, B Bakeroot, ... 2011 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2011 | 32 | 2011 |
| SPECIAL SECTION ON 2011 PAPERS FROM THE SYMPOSIUM ON ELECTRICAL OVERSTRESS AND ELECTROSTATIC DISCHARGE EFFECTS SH Chen, A Griffoni, P Srivastava, D Linten, S Thijs, M Scholz, M Denis, ... | 30* | 2012 |
| 10 �m pixel-to-pixel pitch hybrid backside illuminated AlGaN-on-Si imagers for solar blind EUV radiation detection PE Malinowski, JY Duboz, P De Moor, J John, K Minoglou, P Srivastava, ... 2010 International Electron Devices Meeting, 14.5. 1-14.5. 4, 2010 | 28 | 2010 |
| Silicon substrate engineered high-voltage high-temperature GaN-DHFETs P Srivastava, J Das, RP Mertens, G Borghs IEEE transactions on electron devices 60 (7), 2217-2223, 2013 | 26 | 2013 |
| GaN-based HEMTs tested under high temperature storage test D Marcon, X Kang, J Viaene, M Van Hove, P Srivastava, S Decoutere, ... Microelectronics Reliability 51 (9-11), 1717-1720, 2011 | 20 | 2011 |
| AlGaN-on-Si-Based 10- Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range PE Malinowski, JY Duboz, P De Moor, J John, K Minoglou, P Srivastava, ... IEEE electron device letters 32 (11), 1561-1563, 2011 | 20 | 2011 |
| Investigation of light-induced deep-level defect activation at the AlN/Si interface D Visalli, M Van Hove, M Leys, J Derluyn, E Simoen, P Srivastava, ... Applied physics express 4 (9), 094101, 2011 | 16 | 2011 |
| GaN-on-Si HEMTs for 50V RF applications D Marcon, J Viaene, F Vanaverbeke, X Kang, S Lenci, S Stoffels, ... 2012 7th European Microwave Integrated Circuit Conference, 325-328, 2012 | 13 | 2012 |
| GaN-on-Si for high-voltage applications D Visalli, M Van Hove, P Srivastava, D Marcon, K Geens, X Kang, ... ECS Transactions 41 (8), 101, 2011 | 10 | 2011 |
| Modification of electric fields of compound semiconductor devices D Piedra, JG Fiorenza, P Srivastava US Patent App. 17/067,988, 2021 | 7 | 2021 |
| GaN-on-Si for power conversion M Germain, J Derluyn, M Van Hove, F Medjdoub, J Das, D Marcon, ... | 7 | 2010 |
Denis MarconimecVerified email at imec.be
